dsb 60 c 45hb advanced schottky symbol definition r a t i n g s features / advantages: very low vf extremely low switching losses low irm-values improved thermal behaviour high reliability circuit operation low voltage peaks for reduced protection circuits low noise switching low losses typ. max. i fsm i r a ma v 320 i fav a v f 0.62 r thjc 0.95 k/w v r = t vj = 123 min. 30 ms (50 hz), sine applications: rectifiers in switch mode power supplies (smps) free wheeling diode in low voltage converters v rrm v 45 10 t vj v c = t vj c = ma c 100 package: part number v r = i f =a v t c = 125 c p tot 130 w t c c = e a s tbd mj t vj c = i a s =a;l =h i a r a v a = tbd f = 10 khz 1.5v r typ.; t vj 150 c -55 high performance schottky diode low loss and soft recovery common cathode v i v rrm fav f = = = 45 30 0.58 30 t vj =45c tbd 100 dsb 60 c 45hb v a v 45 v 45 25 25 t p =10 25 max. repetitive reverse voltage reverse current forward voltage average forward current thermal resistance junction to case virtual junction temperature total power dissipation max. forward surge current non-repetitive avalanche energy repetitive avalanche current conditions unit 0.58 t vj c = 25 c j tbd pf j unction capacitance v r =v; f = 1 mhz tbd t vj = c 100 125 i f =a 60 t vj = c 25 v 0.88 i f =a 30 i f =a 60 v 0.86 v f0 v 0.31 t vj =150c r f 8.7 threshold voltage slope resistance for power loss calculation only 25 rectangular, d = 0.5 2x industry standard outline epoxy meets ul 94v-0 rohs compliant backside: cathode ixys reserves the right to change limits, conditions and dimensi ? 2006 ixys all rights reserved 0629 data according to iec 60747and per diode unless otherwise specified
dsb 60 c 45hb advanced i rms a per pin* 50 r thch k/w 0.25 m d nm 1.2 mounting torque 0.8 t st g c 150 storage temperature -55 weight g 6 c e f d b a k g h j l n m dim. millimeter inches min. max. min. max. a 19.81 20.32 0.780 0.800 b 20.80 21.46 0.819 0.845 c 15.75 16.26 0.610 0.640 d 3.55 3.65 0.140 0.144 e 4.32 5.49 0.170 0.216 f 5.4 6.2 0.212 0.244 g 1.65 2.13 0.065 0.084 h - 4.5 - 0.177 j 1.0 1.4 0.040 0.055 k 10.8 11.0 0.426 0.433 l 4.7 5.3 0.185 0.209 m 0.4 0.8 0.016 0.031 n 1.5 2.49 0.087 0.102 symbol definition ratings typ. max. min. conditions rms current thermal resistance case to heatsink unit * irms is typically limited by: 1. pin-to-chip resi stance; or by 2. current capability of the chip. in case of 1, a common cathode/anode configuration and a no n-isolated backside, the whole cu rrent capability can be used by c onnecting the backside. outlines to-247ad f c n 120 mounting force with clip 20 ixys reserves the right to change limits, conditions and dimensi ? 2006 ixys all rights reserved 0629 data according to iec 60747and per diode unless otherwise specified
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